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1

Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy

A.C Lamb, J.F.W Schiz, J.M Bonar, F Cristiano, P Ashburn, S Hall, P.L.F Hemment

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 459 KB

english, 2001

2

Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy

J. M. Bonar, J. Schiz, P. Ashburn

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1999

Language:

english

File:

PDF, 104 KB

english, 1999

3

Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy

Schiz, J.F.W., Lamb, A.C., Cristiano, F., Bonar, J., Ashburn, P., Hall, S., Hemment, P.L.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 149 KB

english, 2001

4

The influence of BF2 and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

Lukyanchikova, N., Garbar, N., Petrichuk, M., Schiz, J.F.W., Ashburn, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 210 KB

english, 2001

5

Poster #117 ANALYSIS OF CANDIDATE GENES CONFERRING SUSCEPTIBILITY TO SCHIZOPHRENIA IN A SAMPLE FROM INDONESIA WITH 1081 CASES AND 1111 CONTROLS REVEALS ASSOCIATION WITH RS1344706 LOCATED IN THE ZNF804A GENE

Sibylle G. Schwab, Nan Dai, Wen Wen Qjn, Mutiara D.B. Wildenauer, Agung A.A. Kusumawardhani, Indonesia Schiz. Gen Consortium, Dieter B. Wildenauer

Journal:

Schizophrenia Research

Year:

2012

Language:

english

File:

PDF, 93 KB

english, 2012

6

[IEEE IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO - London, UK (24-25 Nov. 1997)] IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) - A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy

Schiz, J., Bonar, J.M., Ashburn, P.

Year:

1997

Language:

english

File:

PDF, 1.02 MB

english, 1997

7

[IEEE 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (29 Sept.-1 Oct. 1996)] Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting - Increased current gain and reduced emitter resistance in F-implanted, low thermal budget polysilicon emitters for SiGe HBTs

Moiseiwitsch, N.E., Schiz, J.F.W., Marsh, C.D., Ashburn, P., Booker, G.R.

Year:

1996

Language:

english

File:

PDF, 507 KB

english, 1996

8

Behavior of Positive Muons in Liquid Helium

Crane, T. W., Casperson, D. E., Chang, H., Hughes, V. W., Kaspar, H. F., Lovett, B., Schiz, A., Souder, P., Stambaugh, R. D., Putlitz, G. zu, Kane, J. R.

Journal:

Physical Review Letters

Year:

1974

Language:

english

File:

PDF, 565 KB

english, 1974

9

scattering between 70 and 200 GeV/ c

Fajardo, L. A., Majka, R., Marx, J. N., Némethy, P., Rosselet, L., Sandweiss, J., Schiz, A., Slaughter, A. J., Ankenbrandt, C., Atac, M., Brown, R., Ecklund, S., Gollon, P. J., Lach, J., MacLachlan, J

Journal:

Physical Review D

Year:

1981

Language:

english

File:

PDF, 774 KB

english, 1981

10

Hadron-nucleus elastic scattering at 70, 125, and 175 GeV/ c

Schiz, A., Fajardo, L. A., Majka, R., Marx, J. N., Némethy, P., Rosselet, L., Sandweiss, J., Slaughter, A. J., Ankenbrandt, C., Atac, M., Brown, R., Ecklund, S., Gollon, P. J., Lach, J., MacLachlan, J

Journal:

Physical Review D

Year:

1980

Language:

english

File:

PDF, 462 KB

english, 1980

11

elastic scattering at 200 GeV/ c

Schiz, A., Fajardo, L. A., Majka, R., Marx, J. N., Némethy, P., Rosselet, L., Sandweiss, J., Slaughter, A. J., Ankenbrandt, C., Atac, M., Brown, R., Ecklund, S., Gollon, P. J., Lach, J., MacLachlan, J

Journal:

Physical Review D

Year:

1981

Language:

english

File:

PDF, 662 KB

english, 1981

12

Activation energy for fluorine transport in amorphous silicon

Nash, G. R., Schiz, J. F. W., Marsh, C. D., Ashburn, P., Booker, G. R.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 352 KB

english, 1999

13

Tem Studies of Polysilicon Emitter Bipolar Materials & Devices: Increased Interfacial Oxide Break-Up and Polysilicon Regrowth and Decreased Emitter Resistance by Fluorine Implantation

Marsh, C. D., Moiseiwitsch, N. E., Schiz, J., Booker, G. R., Ashburn, P.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 3.09 MB

english, 1998

14

A Selective/Non-Selective Epitaxy Process For A Novel Sige Hbt Architecture

Schiz, J., Bonar, J. M., Shburn, P

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 2.58 MB

english, 1998